A High‐Detectivity, Fast‐Response, and Radiation‐Resistant TiN/CdZnTe Heterojunction Photodiode (Advanced Optical Materials 2/2023)
نویسندگان
چکیده
Photodiodes have found wide practical applications as sensing and information transmission technology in different environments. Viktor Brus co-workers (article number 2202028) report a novel high-performance UV-vis-NIR heterojunction photodiode based on radiation-resistant functional semiconductor materials: TiN ‘window’ layer CdZnTe photoactive layer. This work pushes the current detectivity–response time boundaries, defined by long-standing materials science device engineering problems developing concurrently highly sensitive, fast-responding, optoelectronic devices compound semiconductors.
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ژورنال
عنوان ژورنال: Advanced Optical Materials
سال: 2023
ISSN: ['2195-1071']
DOI: https://doi.org/10.1002/adom.202370005